Beilstein J. Nanotechnol.2014,5, 2240–2247, doi:10.3762/bjnano.5.233
precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.
Keywords: Langmuir–Blodgettmonolayer
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Figure 1:
Chemical formula of 10,12-pentacosadiynoic acid is shown in (a). Cross-linking among adjacent monom...